ELECTRONIC DEVICES AND CIRCUITS (EC104ES) — All 5 Units
Unit 1: Diode Characteristics and Applications
Explain the construction and operation of the PN Junction Diode.
Draw and explain the I–V characteristics of a PN junction diode.
Define Diode Resistance and explain static and dynamic resistance.
Explain Junction Capacitance and diffusion capacitance.
Discuss Diode Models: ideal, simplified, and piecewise linear models.
Draw and explain the working of the Half-Wave Rectifier.
Draw and explain the working of the Full-Wave Rectifier using center-tap configuration.
Draw and explain the working of the Bridge Rectifier.
Compare half-wave and full-wave rectifiers.
Explain the role of a Capacitor Filter in rectifier circuits.
Define Clipper Circuit and explain its types.
Define Clamper Circuit and explain positive and negative clampers.
Draw and explain the I–V characteristics of the Zener Diode.
Explain the use of a Zener diode as a Voltage Regulator.
Compare ordinary diodes and Zener diodes with suitable applications.
Unit 2: Bipolar Junction Transistor (BJT)
Explain the structure and working principle of the Bipolar Junction Transistor (BJT).
Describe the operation of NPN Transistor and PNP Transistor.
Explain the current components in a BJT and the concept of transistor action.
Define the current gains Alpha (α) and Beta (β) and derive the relation between them.
Draw and explain the circuit configuration of the Common Base (CB) Configuration.
Draw and explain the input and output characteristics of the Common Base configuration.
Draw and explain the circuit configuration of the Common Emitter (CE) Configuration.
Draw and explain the input and output characteristics of the Common Emitter configuration.
Draw and explain the circuit configuration of the Common Collector (CC) Configuration.
Draw and explain the input and output characteristics of the Common Collector configuration.
Compare CB, CE, and CC configurations with respect to current gain, voltage gain, input resistance, and output resistance.
Define Hybrid Parameters (h-Parameters) and explain their significance.
Explain the determination of h-parameters from transistor characteristics.
Derive the relationships among transistor currents IE, IB, and IC.
Discuss the applications of different BJT configurations in electronic circuits.
Unit 3: BJT Biasing
Explain the need for BJT Biasing in transistor circuits.
Define Operating Point (Q-Point) and explain its significance.
Explain the concept of DC Load Line.
Draw and explain the determination of the Q-point using the load line method.
Explain the Fixed Bias Circuit and derive the expressions for collector current and stability factor.
Explain the Collector-to-Base Bias and discuss its advantages.
Explain the Voltage Divider Bias and derive the expressions for the operating point.
Compare fixed bias, collector-to-base bias, and voltage divider bias.
Define Stability Factor.
Derive the stability factor for different biasing circuits.
Explain the phenomenon of Thermal Runaway.
Discuss methods to prevent thermal runaway in transistor circuits.
Explain the role of emitter resistance in improving bias stability.
Solve numerical problems on operating point and stability factor calculations.
Which biasing technique provides the best stability and why?
Unit 4: Transistor Amplifiers
Explain the operation of a Small-Signal Amplifier using a transistor.
Discuss the transistor as a small-signal amplifier and explain the principle of amplification.
Define the h-Parameter Equivalent Circuit and explain its components.
Explain the meaning and significance of hᵢₑ, hᵣₑ, h𝒻ₑ, and hₒₑ parameters in transistor analysis.
Derive the current gain, voltage gain, input impedance, and output impedance of a Common Emitter Amplifier using h-parameters.
Analyze the Common Base Amplifier using h-parameters.
Analyze the Common Collector Amplifier using h-parameters.
Compare CE, CB, and CC amplifiers based on gain and impedance characteristics.
Explain the Approximate CE Model.
Derive the voltage gain of a CE amplifier without an Emitter Bypass Capacitor.
Derive the voltage gain of a CE amplifier with an emitter bypass capacitor.
Explain the effect of emitter resistance and bypass capacitor on amplifier gain and stability.
Draw the AC equivalent circuit of a CE amplifier and explain each component.
Solve numerical problems on h-parameter amplifier analysis.
Discuss the practical applications of transistor amplifiers in electronic systems.
Unit 5: Special Purpose Diodes, FETs and Advanced Devices
Explain the principle of operation and applications of the Silicon Controlled Rectifier (SCR).
Draw and explain the V–I characteristics of the Tunnel Diode.
Explain the construction, working, and applications of the Varactor Diode.
Describe the operation and uses of the Photodiode.
Explain the construction, working principle, and applications of the Solar Cell.
Explain the construction, characteristics, and applications of the Light-Emitting Diode (LED).
Discuss the features and applications of the Schottky Diode.
Explain the structure and operation of the Junction Field-Effect Transistor (JFET).
Draw and explain the drain and transfer characteristics of a JFET.
Explain the structure, operation, and characteristics of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
Differentiate between Enhancement-Mode MOSFET and Depletion-Mode MOSFET.
Explain the applications of MOSFETs in switching and amplification circuits.
Compare JFET and MOSFET characteristics.
Discuss the advantages of FETs over BJTs.
Explain the role of advanced semiconductor devices in modern electronic systems.